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SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS

SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS
SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS
SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS
SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS
SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS
$100.00
  • Stock: In Stock
  • Model: SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS

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SQD25N06-22LT4GE3 MOSFET 60V 25A 62W 1 SET 10 PCS

Sqd25n06-22lt4ge3 mosfet – 60v 25a 62w – 1 set (10 pcs)

Technical Specifications:

  • Product Type: Part
  • Main Part Number(s): SQD25N06-22LT4GE3, 60V, 25A
  • Alternative / Cross Reference: 175, 55
  • Condition: Aftermarket
  • Package: Each set includes 10 pieces, securely packaged for professional use.; - Package / Case: DPAK-3 (TO-252-3); Package Information:; - 1 Set = 10 PCS in a secure box

Dimensions:

  • - Dimensions (L × W × H): 6.73 × 6.22 × 2.38 mm

Features & Benefits:

  • High-quality aftermarket Part
  • Direct-fit design for easy installation
  • Durable construction for long service life
  • Cost-effective alternative to OEM parts
  • Ready for fast dispatch worldwide

Additional Notes :

  • The SQD25N06-22LT4GE3 is a high-performance N-channel MOSFET from Vishay Semiconductors, designed for efficient power switching and control.
  • It features low Rds(on) for energy efficiency and reliable performance in automotive and industrial applications.
  • Technical Specifications:
  • - Technology: Si (Silicon)
  • -
  • - Transistor Type: N-Channel MOSFET
  • -
  • - Number of Channels: 1
  • -
  • -
  • - Mounting Style: SMD/SMT
  • -
  • - V DS - Drain-Source Breakdown Voltage: 60 V
  • -
  • - I D - Continuous Drain Current: 25 A
  • -
  • - R DS(on) - Drain-Source Resistance: 18 mΩ
  • -
  • - V GS - Gate-Source Voltage: -20 V to +20 V
  • -
  • - V GS(th) - Gate-Source Threshold Voltage: 1.5 V
  • -
  • - Q g - Total Gate Charge: 50 nC
  • -
  • - Rise Time: 10 ns
  • -
  • - Fall Time: 6 ns
  • -
  • - Turn-On Delay (Typical): 8 ns
  • -
  • - Turn-Off Delay (Typical): 24 ns
  • -
  • - Forward Transconductance (Min): 32 S
  • -
  • - Power Dissipation (P d ): 62 W
  • -
  • -
  • -
  • - Series: SQ
  • -
  • - Trade Name: TrenchFET
  • -
  • - Qualification: AEC-Q101 Automotive Grade
  • -
  • - Packaging: Reel / Cut Tape
  • -
  • - Unit Weight: 330 mg
  • -
  • -
  • Features & Benefits:
  • - High-performance MOSFET with low Rds(on)
  • -
  • - Automotive-grade AEC-Q101 qualified
  • -
  • - Fast switching for precise power control
  • -
  • - Durable design for industrial and automotive applications
  • -
  • - Wide operating temperature range up to +175°C
  • -
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Tags: SQD25N06-22LT4GE3 , 60V , 25A , 175 , 55 , , Part
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